Shrinking silicon transistors have reached their physical limits, but a team from the University of Tokyo is rewriting the rules. They've created a cutting-edge transistor using gallium-doped indium ...

国立研究開発法人 産業技術総合研究所【理事長 中鉢 良治】（以下「産総研」という）フレキシブルエレクトロニクス研究センター【研究センター長 鎌田 俊英】フレキシブル材料基盤チーム 堤 潤也 研究員、同研究センター 長谷川 達生 総括研究主幹らは ...

Atomic-scale imperfections in graphene transistors generate unique wireless fingerprints that cannot be copied or predicted, offering a new approach to hardware security for IoT devices.

トランジスタ界面に存在する原子位置の乱れがノイズ発生の起源 概要 国立研究開発法人 産業技術総合研究所（以下「産総研」という）デバイス技術研究部門 稲葉 工 研究員、岡 博史 研究員、森 貴洋 研究グループ長は、量子ビット素子の制御に用いる極 ...

Announced yesterday, researchers from Surrey and Cambridge universities and the National Research Institute in Rome have used thin-film source-gated transistor (SGT) to create compact analogue circuit ...

A new technical paper titled “Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor” was published by researchers at Lund University in Sweden. “Reconfigurable transistors ...

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The circuit was designed to be able to obtain signals via amplitude modulation where the sensitivity and selectivity is fairly good. Amplitude Modulation AM – a method of emphasizing data on an ...